Journal of Crystal Growth, Vol.311, No.22, 4632-4635, 2009
Alloy phase separation in InAs/InAlAs/InP nanostructure superlattices studied by finite element calculation
The alloy phase separation effect in InAlAs spacer layer of InAs/InAlAs nanostructure superlattices was studied by two-dimensional finite element calculation. The calculation results showed that InAs islands with wide top would prefer to induce "V"-like In-rich InAlAs arms above InAs islands in InAlAs spacer layer, while InAs islands with narrow top would promote the formation of "I"-like In-rich InAlAs arms above InAs islands in InAlAs spacer layer which corresponded well with the experimental results reported in Ref. [9]. (C) 2009 Elsevier B.V. All rights reserved.
Keywords:Nanostructures;Alloy phase separation;Molecular beam epitaxy;Semiconducting III-V materials;InAs/InAlAs