Large indium-doped detector grade (52 mm diameter, 1.1 kg) Cd0.9Zn0.1Te crystals have been grown by THM technique from Te-rich solution. The as-grown crystals showed the dark resistivity of 2 x 10(10)Omega cm and mobility life time product of electrons of 4-7 x 10(-3) cm(2)/V. A quasi-hemispherical configuration was used in the device fabrication, which provides an economic way of electron only detector configuration. A resolution of 2% was achieved for the Cs-137 662 keV gamma line at room temperature for the as-grown THM samples. (C) 2009 Elsevier B.V. All rights reserved.