Alternating current (a.c.) electrical properties of thermally evaporated amorphous thin films of SnO2 sandwiched between aluminium electrodes have been investigated for temperature during electrical measurements, film thickness, substrate temperature and post-deposition annealing. The a.c. conductivity, sigma(omega), is found to vary with frequency according to the relation sigma(omega) proportional to omega(s), indicating a hopping process at low temperature. The conduction is explained by single polaron hopping process as proposed by Elliott. The increase in electrical conductivity with increase in temperature during electrical measurements is ascribed to the increase in the formation and high mobility of doubly ionized oxygen vacancies. The increase in conductivity with increase in film thickness is caused by the increase in interstitial tin, oxygen vacancies and defects produced due to deviation from stoichiometry. The increase in conductivity with increase in substrate and annealing temperature may be due to the formation of singly or doubly ionized oxygen vacancies and tin species of lower oxidation state. Measurements of capacitance C as a function of frequency and temperature show a decrease in C with increasing frequency and increase in C with increasing temperature. The increase in capacitance in the high-temperature low-frequency region is probably due to space charge polarization induced by the increasing number of free carriers as a result of increasing temperature.