A conductive photoresist for photolithographic application was studied here. The negative near-UV sensitive epoxy-based photoresist was used as a polymer matrix and conductive carbon black was used as functional filler. DC electrical resistivity of composite as a function of filler concentration has a well-known S-shape. After UV-exposure the resistivity of the composite decreases for almost five orders of magnitude, mostly at percolation threshold (approx. 0.6 vol.%). This effect can be attributed to the fully cross-linked polymer structure formed during UV-exposure of the composite. The resistivity of prepared samples also depend on the state of dispersion of the functional filler obtained using different dispersing additives. Composites with better dispersed particles have lower resistivities. This effect remained below one order of magnitude and decreased after UV-exposure. The composites with carbon black concentration of up to 1.1 vol.% are suitable for spin-coating and photolithography.