We have developed a flow-type reaction system that enables independent control of each deposition parameter at a constant value. Here we studied the deposition kinetics and narrow-gap-filling of copper thin film in supercritical carbon dioxide fluids using hexafluoroacetylacetonatecopper (Cu(hfac)(2)) as a precursor. From the temperature dependence of the growth rate, the activation energy for Cu growth was determined at 0.45 +/- 0.09 eV. The dependences of the growth rate on the H-2 and Cu(hfac)(2) concentrations were studied, and an apparent rate equation was obtained. The gap-filling property was found to improve as H-2 concentration increases. The crystallographic texture of the obtained film was also studied, and (1 1 1) preferential films were obtained when the H-2 concentration was high. (c) 2007 Elsevier B.V. All rights reserved.