Sr-doped PbZrO3 antiferroelectric (AFE) thin films have been fabricated on the platinum-buffered silicon substrates via the sol-gel technique. The temperature-dependent dielectric properties results indicated that the AFE phase was stabilized for the Sr-modified PbZrO3 thin films with a Curie temperature of 251 degrees C. The recoverable energy density and energy efficiency of the Sr-doped PbZrO3 thin films were enhanced by the doping of strontium. Compared with the pure PbZrO3 AFE thin films, the performance against fatigue of the Sr-doped PbZrO3 thin films were also improved greatly.