A typical kind of antiferroelectric (AFE) thin films with the composition of (Pb0.97La0.02)(Zr0.95Ti0.05)O-3 (PLZT) were successfully fabricated on the platinum-buffered silicon substrates through the modified sol-gel method. X-ray diffractometer results indicated that PLZT films possessed a pure perovskite structure with a strong (100) orientation. The dielectric permittivity-field and polarization-field measurements demonstrated the AFE nature of the PLZT thin films. The level of electric-field-induced strain was measured to be about 0.65% using an scanning probe microscope.