In2O3 thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2, self-assembled nanodielectrics (SANDs)) by spin-coating In2O3 film precursor solutions consisting of ethanolamine (EAA) and InCl3 in methoxyethanol. Optimized film microstructures are characterized by the high-mobility In2O3 00 L orientation and are obtained only within a well-defined range of base: In3+ molar ratios. Electron mobilities as high as similar to 44 cm(2) V-1 s(-1) are measured for n(+)-Si/SAND/In2O3/Au devices using an EAA/In3+ molar ratio = 10, This result combined with /on//off ratios of similar to 10(6) and <5 V operating voltages is encouraging for high-speed applications.