Single-crystal field-effect transistors (FETs) based on a fluorocarbon-substituted dicyanoperylene-3,4:9, 10-bis(dicarboximide) [PDIF-CN2] were fabricated by lamination of the semiconductor crystal on Si-SiO2/PMMA-Au gate-dielectric-contact substrates. These devices were characterized both in vacuum and in the air, and they exhibit electron mobilities of ca. 6-3 and ca. 3-1 cm(2) V-1 s(-1), respectively, I-on:I-off > 10(3), and near-zero threshold voltage.