Origin of bistable memory characteristics of organic light-emitting diodes with LiF/Al cathode

Kyoung Soo Yook; Jun Yeob Lee

Journal of Industrial and Engineering Chemistry, Vol.16, No.2, 230-232, March, 2010

DOI10.1016/j.jiec.2010.01.059 Export Citation

Origin of bistable memory characteristics of organic light-emitting diodes with LiF/Al cathode

Kyoung Soo Yook, and Jun Yeob Lee^†

Department of Polymer Science and Engineering, Dankook University, Jukjeon-dong, Suji-gu, Yongin-si, Kyeonggi-do 448-701, Republic of Korea

E-mail:

Bistable memory performances of organic light-emitting diodes (OLEDs) with LiF/Al cathode were investigated and the origin of bistability was studied. LiF was essential to get stable memory performances in OLEDs and on/off ratio was improved by more than 50 times by using LiF/Al instead of Al cathode. High on/off ratio over 1000 was obtained from switching test and the multilevel switching of organic light-emitting bistable devices (OLEBDs) was realized by changing the writing voltage of OLEBDs. AlF3 formation at the interface during evaporation of Al was proposed as the main mechanism for bistability of OLEBDs.

Keywords:Organic light-emitting bistable devices;Multilevel switching;High on/off ratio

[References]

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Tseng RJ, Ouyang J, Chu C, Huang J, Yang Y, Appl. Phys. Lett., 88, 123506 (2006)
Lauters M, McCarthy B, Sarid D, Jabbour GE, Appl. Phys. Lett., 87, 231105 (2005)
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Gao X, Zou D, Fujita K, Tsutsui T, Appl. Phys. Lett., 81, 4508 (2002)
Yook KS, Jeon SO, Joo CW, Lee JY, J. Ind. Eng. Chem., 15(3), 328 (2009)
Heil H, Steiger J, Karg S, Gastel M, Ortner H, von Seggern H, Stoßel M, J. Appl. Phys., 89, 420 (2001)
Mason MG, Tang CW, Hung LS, Raychaudhuri P, Madathil J, Giesen DJ, Yan L, Le QT, Gao Y, Lee ST, Liao LS, Cheng LF, Salaneck WR, dos Santos DA, Bredas JL, J. Appl. Phys., 89, 1756 (2001)
Kim SH, Jang J, Lee JY, Electrochem. Solid State Lett., 10(10), J117 (2007)
Lee JY, J. Ind. Eng. Chem., 14(5), 676 (2008)
Verbakel F, Meskers SCJ, Janssen RAJ, Gomes HL, Colle M, Buchel M, de Leeuw DM, Appl. Phys. Lett., 91, 192103 (2007)
Colle M, Buchel M, de Leeuw DM, Org. Electron., 7, 305 (2006)
Chen J, Xu L, Lin J, Geng Y, Wang L, Ma D, Appl. Phys. Lett., 89, 083514 (2006)

[Referenced By]

[1] Li L, Ling Q, Lim S, Tan Y, Zhu C, Chan DSH, Kang E, Neoh K, Org. Electron., 8, 401 (2006)

[2] Tseng RJ, Ouyang J, Chu C, Huang J, Yang Y, Appl. Phys. Lett., 88, 123506 (2006)

[3] Lauters M, McCarthy B, Sarid D, Jabbour GE, Appl. Phys. Lett., 87, 231105 (2005)

[4] Kang SH, Crisp T, Kymissis I, Bulovic V, Appl. Phys. Lett., 85, 4666 (2004)

[5] Gao X, Zou D, Fujita K, Tsutsui T, Appl. Phys. Lett., 81, 4508 (2002)

[6] Yook KS, Jeon SO, Joo CW, Lee JY, J. Ind. Eng. Chem., 15(3), 328 (2009)

[7] Heil H, Steiger J, Karg S, Gastel M, Ortner H, von Seggern H, Stoßel M, J. Appl. Phys., 89, 420 (2001)

[8] Mason MG, Tang CW, Hung LS, Raychaudhuri P, Madathil J, Giesen DJ, Yan L, Le QT, Gao Y, Lee ST, Liao LS, Cheng LF, Salaneck WR, dos Santos DA, Bredas JL, J. Appl. Phys., 89, 1756 (2001)

[9] Kim SH, Jang J, Lee JY, Electrochem. Solid State Lett., 10(10), J117 (2007)

[10] Lee JY, J. Ind. Eng. Chem., 14(5), 676 (2008)

[11] Verbakel F, Meskers SCJ, Janssen RAJ, Gomes HL, Colle M, Buchel M, de Leeuw DM, Appl. Phys. Lett., 91, 192103 (2007)

[12] Colle M, Buchel M, de Leeuw DM, Org. Electron., 7, 305 (2006)

[13] Chen J, Xu L, Lin J, Geng Y, Wang L, Ma D, Appl. Phys. Lett., 89, 083514 (2006)