Si sculptured thin films consisting of spiral-, screw-, and columnlike-shaped nanostructures were grown by ion beam-induced glancing angle deposition of Si on rotating bare Si[001] substrates at different substrate rotational speeds and substrate temperatures ranging from room temperature to (360 +/- 10)degrees C. For rotational speeds leading to the growth of nanoscrews at room temperature, morphology changes are observed with increasing temperature, such as an increase of the critical height at which single spiral fibers start merging to screws, thus giving the possibility to grow separated nanospirals with diameters of about 30 nm over a large thickness range. A decrease of the overall film thickness, indicating a change in the film density, is also observed with increasing the substrate temperature. For deposition conditions leading to the growth of vertical columns at room temperature, the substrate temperature influences the total number of columns, the column diameter, and the total structure height. The temperature-related changes in structure morphology show that surface diffusion effects play an important role in the morphological evolution of sculptured thin films consisting of helicoidal and columnlike structures during their growth by glancing angle deposition. (C) 2008 American Vacuum Society.