Scanning tunneling microscopy and scanning tunneling spectroscopy (STS) are used to study the structural and electronic properties of bilayer epitaxial graphene on SiC(0001). Topographic images reveal that graphene conforms to the SiC interface morphology and is observed to be continuous across steps separating adjoining terraces. Bilayer epitaxial graphene is shown to be Bernal stacked as is evidenced by bias-dependent topographic imaging. STS maps of the differential conductance show that graphene lattice defects cause scattering of charge carriers near the Fermi level. An analysis of stationary scattering patterns observed in the conductance maps determines the energy-momentum dispersion relation within 100 meV of the Fermi level. In contrast to lattice defects, disorder at the SiC interface and at subsurface steps plays a much lesser role in the scattering of charge carriers. (C) 2008 American Vacuum Society.