The authors have developed an electrically conductive sputtering target by a sintering process using powders of SiO2 and boron doped Si. This target composition can be sputtered using dc, pulse dc, or rf power supplies. Using rf sputtering the authors have demonstrated deposition rates that are four times higher than typical deposition rates for rf sputtered SiO2 films from quartz targets. Further, the optical transmittance, refractive index, microstructure, and etching resistance of the SiO2 films prepared using this target are comparable to films produced from rf sputtered quartz targets. In this article, the authors present details of the conductive SiO2:Si target composition as well as the resulting SiO2 film properties and deposition rates that have been achieved. They also discuss the possible mechanisms for such high deposition rates.