The authors report on the synthesis, electrical characterization, and high temperature electrochemical conductivity of nitrogen passivated crystalline rare-earth doped hafnia thin films with high-dielectric constant (similar to 30) and low leakage currents. High temperature electrochemical conductivity of the Re-doped nitrided hafnia thin films are comparable to one another. The results are of potential significance to synthesis of crystalline oxides on semiconductor surfaces with tailored functionality. (c) 2008 American Vacuum Society.