Bi1.5Mg1.0Nb1.5O7 thin films were deposited at various temperatures by rf-magnetron sputtering on Pt/TiO2/SiO2/Si substrates. The structural and electrical properties were investigated as a function of deposition temperature. The films deposited below 400 degrees C show an amorphous state and a dielectric constant of approximately 31-51. On the other hand, films deposited at 500 degrees C exhibit well-developed crystallinity and a high dielectric constant of approximately 104. However, for crystallized films deposited at 500 degrees C, the leakage current density is higher than that of the films deposited below 300 degrees C. (c) 2008 American Vacuum Society.