This article investigates, with computer simulations, whether electron optical aberration correctors could be used to improve the performance of electron beam equipment for the semiconductor manufacturing industry. The simulations are performed using the differential algebraic method. Three types of aberration corrector are investigated: (1) a quadrupole-octopole corrector for critical dimension scanning electron microscopy for metrology and inspection (it is shown that this type of corrector, which corrects spherical and chromatic aberrations, can provide a smaller probe diameter with a larger numerical aperture, thereby improving resolving power and throughput), (2) a hexapole planator for projection electron beam lithography (it is demonstrated that field curvature, astigmatism, and spherical aberration can be corrected, thereby permitting a larger field size), and (3) a mirror corrector for reflective electron beam lithography (it is shown how field curvature and chromatic aberration in such systems can be corrected by using an electron mirror).