In this article, the authors compare a polymer resist to a thermally curable monomer resist in a full 8 in. wafer thermal nanoimprint lithography process. Using exactly the same imprinting conditions, the authors compare the printing quality and investigate the resist distribution through large area gratings (6x6 mm(2)) with various densities. It is shown that a liquid monomer solution greatly enhance the printing uniformity because of a much wider resist redistribution and flow during the process. Redistribution of the monomer resist is observed over an entire grating, while it is observed only over a few periods of a grating for the polymer in the same conditions. Furthermore, a low molecular weight resist allows reducing the imprinting force as well as the total cycle time.