Super-high-aspect-ratio structures (>10) in hydrogen silsesquioxane resist using direct write electron beam lithography at 100 kV and hot development and rinse are reported. Posts of 100 nm in width and 1.2 mu m tall have been successfully fabricated without the need of supercritical drying. Hot rinse solution with isopropyl alcohol has been used to reduce surface tension effects during drying. Dose absorption effects have been observed and modeled using known Monte Carlo models. These results indicate that for e-beam exposures of thick negative resists (>1 mu m), the bottom of the structures will have less cross-link density and therefore will be less stiff than the top. These results will have impact in the design of high-aspect-ratio structures that can be used in microelectromechanical system devices and high-aspect-ratio Fresnel zone plates.