Semiconductors have a broad range of uses. In particular, semiconductors used for power conversion are generically called "power devices." Silicon carbide (SiC) power devices have been gaining attention as next-generation semiconductors because they have excellent electrical characteristics compared to silicon power devices. However, SiC is difficult to grind efficiently because of its hard and brittle characteristic. In this study, the authors used some effective grinding methods and investigated efficient grinding conditions. As a result of their experiments, the average removal volume was 80.0% for 40 mu m of grinding with a 1200 mesh-size wheel.