The hot electron transport properties of the Cu/Si(001) interface have been studied using ballistic electron emission microscopy (BEEM). The Schottky barrier height was measured to be 0.64 +/- 0.02 eV. The scanning tunneling microscopy images provide evidence of Volmer-Weber growth of the metal, while Rutherford backscattering spectrometry data corroborated with Auger depth profiling indicate distinct Cu and Si regions with little intermixing. Comparison with Au/Si(001) BEEM data provides some insight into the hot electron transport and scattering properties of the Cu/Si(001) interface.