The authors present a resonant approach to enhance 1550 nm emission efficiency of amorphous silicon suboxide doped with Er3+ (a-SiOx << Er >>) layers with silicon nanoclusters (Si-NC). Our results show an important result toward enabling the use of silicon-based material for active photonic component fabrication. Two distinct techniques were combined to fabricate a structure that allowed increasing approximately 12 times the 1550 nm emission. First, layers of SiO2 were obtained by conventional wet oxidation and a-SiOx << Er >> matrix was deposited by reactive rf cosputtering. Second, an extra pump channel (I-4(15/2) to I-4(9/2)) of Er3+ was created due to Si-NC formation on the same a-SiOx << Er >> matrix via a hard annealing at 1150 degrees C. The SiO2 and the a-SiOx << Er >> thicknesses were designed to support resonances near the pumping wavelength (similar to 500 nm), near the Si-NC emission (similar to 800 nm) and near the a-SiOx << Er >> emission (similar to 1550 nm) enhancing the optical pumping process.