화학공학소재연구정보센터
Journal of Vacuum Science & Technology B, Vol.27, No.6, 2569-2571, 2009
Nanoscale geometry assisted proximity effect correction for electron beam direct write nanolithography
Nanoscale geometry assisted proximity effect correction is presented for nanoscale structures and the results clearly show improvements in feature sharpness down to 20 nm structures. The design rule is simple to implement onto existing PEC software and enables implementation of PEC down to the resolution limits of electron beam lithography.