Conventional patterning of HfO2 as a gate dielectric is a multistep complicated process that involves deposition of oxide, photolithography, and hard mask etching. In order to simplify the process of HfO2 patterning, the authors have developed photo- and electron beam-sensitive spin-coatable HfO2 resists for direct writing. They were prepared by reacting hafnium tert-butoxide with benzoylacetone in n-butanol and were found to be highly stable in air. Fourier transform infrared studies suggest that exposure to radiation results in the gradual removal of organic material from the resist and the enrichment of the resist with inorganics. This makes the exposed resist insoluble in organic solvents such as ethanol, thereby providing high-resolution negative patterns as small as similar to 10 nm wide. A silicon-on-insulator field effect transistor has been fabricated using sol-gel-derived HfO2 resist as a high-k gate dielectric and characterized over a range of temperatures. At room temperature a relatively high gate leakage current was observed which degrades the device performance, but at low temperatures this leakage current is strongly suppressed.