Materials Chemistry and Physics, Vol.116, No.2-3, 497-502, 2009
Epitaxial growth of faceted SiC single-crystal nanoparticles using a carbon nanocapsule as a reacting template
In this study, the faceted SiC nanoparticles displaying a unified faceted angle have been synthesized using a CNC (carbon nanocapsule) as a reacting template. A possible new reaction between SiO(g) and graphene, 2SiO((g)) + C-(s) -> SiC(s) + SiO2(g), was found. A growth model was proposed to elucidate the growth of the faceted SiC nanoparticles. It was found that the match of the graphene (0 0 2) plane of the CNC caused the growth of SiC nanoparticles to be initiated by the SiC {220} planes. The faceted angle of SiC nanoparticles was a result of the intersection angle of the {111} planes. (C) 2009 Elsevier B.V. All rights reserved.