In this study, the epilayers of gallium nitride light-emitting diode grown by metallorganic chemical vapor deposition on the stripe-patterned sapphire substrate prepared by chemical wet etching were characterized. The stripe pattern on vertical GaN/Si surface transferred by wafer bonding and laser lift-off techniques from the patterned sapphire substrate contributes much stronger photoluminescence intensity. (C) 2008 The Electrochemical Society.