Samples of undoped LaMnO3 (LM), Sr-doped LaMnO3 (LSM), and Ti-doped LaMnO3 (LTM) were fabricated by conventional solid-state ceramic processing methods. The objective of Ti doping was to suppress oxygen vacancy concentration/ion transport, while doping with Sr was to enhance oxygen vacancy concentration/ion transport in relation to undoped LM. Total conductivity, mainly electronic, was measured between 500 and 800 degrees C in air. Coatings of LSM, LM, and LTM, 1 mu m thick, were deposited on Haynes 230 (H230) foils by sputtering. Uncoated and coated H230 samples were oxidized in air at 800 degrees C for up to 1080 h. Oxidation kinetics of uncoated and coated samples was studied by measuring oxide scale thickness as a function of time. In all coated samples, oxide scale formed under the coating. All coatings were found to suppress oxidation kinetics. Of the materials studied, LTM was the most protective while LSM was the least protective, in accord with defect chemistry, LTM with the lowest oxygen vacancy concentration and LSM with the highest. Area specific resistance (ASR) measurements showed that LTM-coated samples exhibited the lowest ASR, while the uncoated ones exhibited the highest ASR, again in accord with defect chemistry. A 15 mu m LTM coating should be sufficient to ensure a 40,000 h interconnect life at 800 degrees C. A comparison of LTM coating to Mn-Cr-spinel of earlier work shows that LTM coating is similar to 23 times more effective than spinel coating in suppressing oxidation kinetics. (C) 2008 The Electrochemical Society.