High-Performance MIM Capacitors Using a High-kappa TiZrO Dielectric

Cheng CH; Pan HC; Lin SH; Hsu HH; Hsiao CN; Chou CP; Yeh FS; Chin A

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Journal of the Electrochemical Society, Vol.155, No.12, G295-G298, 2008

High-Performance MIM Capacitors Using a High-kappa TiZrO Dielectric

Cheng CH, Pan HC, Lin SH, Hsu HH, Hsiao CN, Chou CP, Yeh FS, Chin A

We have fabricated high-kappa Ni/TiZrO/TaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3x10(-8) A/cm(2) at -1 V was obtained for a 18 fF/mu m(2) capacitance density. For a 5.5 fF/mu m(2) capacitance density device, a small voltage coefficient of capacitance alpha of 105 ppm/V-2 and temperature coefficient of capacitance of 156 ppm/degrees C were measured. (c) 2008 The Electrochemical Society. [DOI: 10.1149/1.2993977] All rights reserved.