Low-pressure chemical vapor deposition of silicon-germanium (Si1-xGex) and its SPC below 400 degrees C are investigated. The effects of precursor ratio [SiH4/SiH2Cl2 (DCS):GeH4], pressure, and temperature are examined with the goals of film composition tunability and high deposition rates. SiH4 is found to be a better source gas than DCS because the decomposition rate of SiH4 is faster than that of DCS during the deposition process. In the SiH4:GeH4 system, the binary deposition mechanism is well explained by the "enhancement" model. The deposition temperature and chamber pressure affect the conversion factor, enabling independent tuning of the film composition and deposition rate. Amorphous Si0.7Ge0.3 and Si0.5Ge0.5 films are obtained at 350 and 400 degrees C by adjusting the deposition conditions while keeping the deposition rates high. Compositional effects of the SiGe films on the SPC are also investigated.