The inside and boundaries of disk-shaped grains of polycrystalline silicon (poly-Si) thin film crystallized by UV silicide-mediated crystallization (SMC) were investigated. The disk-shaped grain composed of needlelike crystallites has a low-angle misorientation below 10 degrees due to large radial growth, and high-angle misorientation appeared at the grain boundaries formed by colliding two adjoining disk-shaped grains. The fraction of misorientation with angle was mainly distributed at low angle in the UV-SMC poly-Si, while it was mainly located at high-angle misorientation, having first-order (Sigma 3) twin properties in the excimer-laser-annealed (ELA) poly-Si. The surface morphology of UV-SMC poly-Si was quiet and smooth compared to that of ELA poly-Si.