A cost-effective technique was introduced to prepare hafnium-titanium dioxide thin film, which was fabricated by anodic oxidation (anodization) of stacked Hf and Ti metals at room temperature in deionized water. Using the anodization method, the linearity of HfTiOx-gate ion-sensitive field-effect transistor (ISFET) was excellent between the pH 2 and 10 range. In addition, capacitor structure is prepared to characterize the capacitance-voltage (C-V) and current-voltage (I-V) curves using high-frequency C-V and I-V measurements, as well as X-ray photoelectron spectroscopy, was also examined to characterize the structural composition.