A three-dimensional porous vanadium oxide was anodically deposited onto graphite substrates (denoted as VOx center dot nH(2)O/G) at 0.7 V from an aqueous solution containing 25 mM VOSO4 and 5 mM H2O2. Through annealing at temperatures up to 350 degrees C, the thermal stability of VOx center dot nH(2)O preserved its porous morphology and excellent capacitive performances in 3 M KCl (pH 2.4). X-ray photoelectron spectroscopic analysis revealed the mixed valence nature of oxy-/hydroxyl-vanadium species in which the amount of V4+ species was not significantly affected by varying the annealing temperature. A maximal specific capacitance of ca. 150-160 F g(-1) measured at 250 mV s(-1) was obtained for this porous VOx center dot nH(2)O annealed between 150 and 250 degrees C. Only 9-17% loss in specific capacitance was found for these VOx center dot nH(2)O when the scan rate of the cyclic voltammetry was increased from 25 to 250 mV s(-1), demonstrating a typical high power property, which was never found in the VOx center dot nH(2)O-based supercapacitors.