The frequency-tripled neodymium-doped yttrium aluminum garnet laser (355 nm) and the KrF pulsed excimer laser (248 nm) were employed to separate GaN thin films from sapphire substrates and to transfer the films to bond with other substrates. The different laser lift-off processes would generate the dislocation density on different regions. In this study, the effects of these two laser sources on structural damage mechanisms and reverse-bias leakages of InGaN-GaN light-emitting diodes (LEDs) were studied.