The electrical characteristics and residual stresses in three types of Ga-doped ZnO (GZO) films formed using a reactive plasma deposition system (type 1 film) and a magnetron sputtering system utilizing dc power (type 2 film) or dc+radio-frequency (rf) power (type 3 film) were compared from the viewpoint of heat resistance as a function of the thermal process for liquid crystal display (LCD) fabrication. The resistivity of the as-formed GZO films prepared at 180 degrees C can be ordered as (2.75 mu m)< type 3 film (3.88 mu m)< type 2 film (6.00 mu m). However, the heat resistance of the films was ordered as type 3 (200-250 degrees C)< type 2 (250-300 degrees C)< type 1 (350-400 degrees C). Thus, the GZO films prepared by magnetron sputtering utilizing rf+dc power did not satisfy the condition for transparent electrodes for LCDs in terms of heat resistance against the ca. 250 degrees C processing step. LCD panels (3 in.) using the GZO transparent electrodes on the red-green-blue color filters were fabricated for demonstrating the feasibility of using this material as an electrode.