Single crystal beta-SiC films with thicknesses up to 10 mu m were grown on Si (100) substrates using the H-2-C3H8-SiH4 system. Two-level factorial design experiments were used to study crystal growth conditions by considering three parameters in the chemical vapor, deposition (CVD) reactor : temperature, reactor free height, and substrate tilt. There was a critical value determined for reactor free height which corresponded to a Grashof number of 155. Smaller free heights produced films with flat growth rate profiles and larger useable areas but with about a 50% reduction in growth rates. Temperature had the strongest effect on crystal quality; increasing the temperature from 1320 to 1360 degrees C produced films having 65% lower carrier concentrations and 56% higher Hall mobilities. When the carrier gas was changed from H-2 to H-2/Ar equimolar mixtures, the average growth rate of beta-SiC films was reduced by a factor of 2.4. Particulate deposition on the reactor wall was greater for larger free heights and for H-2/Ar carrier gas mixtures.