A heterojunction device of Au/Fe-TPP/n-Si/Al was assembled by thermally evaporated deposition. The dark current density-voltage characteristics of device were investigated. Results showed a rectification behavior. Measurements of thermo electric power confirm that Fe-TPP thin film behaves as p-type semiconductors. Electronic parameters such as barrier height, diode ideality factor, series resistance, shunt resistance were found to be 0.83 eV, 1.5, 7 x 10(5) Omega and 2 x 10(10) Omega, respectively. The Au/Fc-TPP/n-Si/Al device indicates a photovoltaic behavior with ail open circuit voltage V-oc of 0.52 V, short circuit current I-sc of 2.22 x 10(-6) A, fill factor FF of 0.49 and con version efficiency 1.13%, under white light illumination power 50 W/m(2). (C) 2008 Elsevier Ltd. All rights reserved.