Solid-State Electronics, Vol.52, No.8, 1221-1224, 2008
Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique
Low-temperature (<500 degrees C) solid-phase crystallization (SPC) of amorphous Si1-xGex (x: 0-0.7) films was examined on insulating substrates by using Ni-imprint technique. Incubation time for SPC was remarkably reduced by catalytic effects without changing growth velocity. As a result, Ni-free large SiGe grains (similar to 4 mu m) were obtained at controlled positions. The crystallinity of the grown regions was almost the same as that of poly-SiGe formed by the conventional high temperature SPC at 600 degrees C. (C) 2008 Elsevier Ltd. All rights reserved.