In this work, we have fabricated and characterized the 3-dimensional fin SONOS flash memory. This device has two independent gates on both sides of Si-fin and each of them governs two side-channels. Fabrication flow and array structure are described as well as operation schemes. The 4-bit/cell operation is demonstrated with the multi-bit concept in fabricated devices. Some fabrication issues related with device characteristics and reliabilities are delivered. (C) 2008 Elsevier Ltd. All rights reserved.