The substrate bias and operating temperature effects on the performance of erbium-silicided Schottky-barrier SOI nMOSFETs have been studied. The temperature dependence of the threshold voltage, the current ratio of I-ON/I-MIN, and the subthreshold swing has been investigated. From temperature dependence of the drain current, it is confirmed that the carrier transport mechanism changes from thermionic emission and tunneling at low gate voltage to drift-diffusion at the high gate voltage. By applying substrate bias voltage, the I-ON/I-MIN ratio and subthreshold swing can be improved. By investigating the substrate bias dependence of I-ON/I-MIN ratio, subthreshold swing, and DIBL, the optimum substrate bias voltage is suggested. (C) 2008 Elsevier Ltd. All rights reserved.