A new method for the extraction of the backscattering coefficient in nanoMOS devices has been demonstrated. The method, which relies on mobility measurements in linear operation, proves very simple and reliable for the determination of the ballistic rate of transport. Moreover, it allows to obtain the drift-diffusion mobility corrected from ballistic effects and therefore to make a diagnostic of the scattering mechanisms at small gate length. (C) 2008 Elsevier Ltd. All rights reserved.