A temperature dependent analytical model has been presented for AlGaN/GaN power high electron mobility transistor (HEMT) to predict the DC performance at elevated temperatures. In this model the effects of temperature on band gap energy, sheet carrier density, threshold voltage, carrier mobility, and saturation velocity are taken into consideration. Channel length modulation in the saturation region of operation and spontaneous and piezoelectric polarization induced charges at the AlGaN/CaN heretointerface are also included in this model. Temperature- and bias-dependent on-wafer current-voltage measurements from 300 K to 500 K were carried out to verify the developed model. DC measurements and model predictions are presented for an AlGaN/GaN power HEMT fabricated on SiC substrate. The developed model shows good agreement with the measured data for a wide range of temperatures. (C) 2009 Elsevier Ltd. All rights reserved.