The confined states in strained silicon fully depleted silicon-on-insulator MOSFETs are investigated using full-band k.p method within the envelope-function approximation. Full-band calculations of important transport parameters - energy band shifts, curvature masses and density-of-state masses - show new results, rising the issues of the limit of simple models like the effective mass approximation and the 6-level k.p model. (C) 2009 Elsevier Ltd. All rights reserved.