The low temperature electrical conductivity behaviour of the n-type InP sample in the insulating regime of the metal-insulator transition is studied in magnetic fields. A negative magnetoresistance is observed and follows the variable range hopping mechanism of conduction. The negative magnetoresistance Delta rho/rho(0) varies as f(1) (T)B-2 in low magnetic fields and as f(2)(T)B in moderate fields both in agreement with the theoretical predictions based on quantum interference. The resistance follows the Efros-Shklovskii variable range hopping as In rho alpha T-1/2 in the presence of a Coulomb gap in the density of states. (C) 2009 Elsevier Ltd. All rights reserved.