This paper describes an explicit compact model of an independent double gate (IDG) MOSFET with an undoped channel. This model includes short channel effects and also mobility reduction, saturation velocity, series resistance and a charge model. It is applicable for symmetrical, asymmetrical and independent gate devices. The validity of this model is demonstrated by comparisons with ATLAS two-dimensional numerical simulations. (C) 2009 Elsevier Ltd. All rights reserved.