We demonstrate for the first time 70 nm gate length TiN/HfO2 pMOSFETs on 200 mm GeOI wafers, with excellent performance: I-ON = 260 mu A/mu m and I-OFF = 500 nA/mu m @ V-d = -1.0 V (without germanide). These performance are obtained using adapted counterdoping and pocket implants. We report the best CV/I vs. I-OFF trade-off for Ge or GeOI devices: CV/I = 4.4 ps, I-OFF = 500 nA/mu m @ V-d = -1 V. Moreover, based on fine electrical characterizations (mu, D-it, R-access, etc.) at T = 77-300 K, in-depth analysis of both ON and OFF states were carried out. Besides, calibrated TCAD simulations were performed to predict the performance enhancements which can be theoretically reached after further device optimization. By using germanide and reducing both interface state density and diode leakage we expect I-ON = 450 mu A/mu m, I-OFF = 100 nA/mu m @ V-d = -1 V for L-g = 70 nm. (C) 2009 Elsevier Ltd. All rights reserved.