We present experimental results on shallow junction formation in strained silicon-on-insulator by antimony ion implantation and standard rapid thermal processing. An attempt is made to obtain Sb activation without layer amorphization by implanting Sb at elevated temperature. The focus is on studying the Sb activation during implantation at high temperature. Rutherford backscattering spectrometry and secondary ion mass spectroscopy are employed for characterization of Sb diffusion in amorphous and crystalline Si. The results are discussed in terms of the defect reaction kinetics involved. (C) 2009 Elsevier Ltd. All rights reserved.