A selective epitaxy collector module for high-speed Si/SiGe:C HBTs

Geynet B; Chevalier P; Brossard F; Vandelle B; Schwartzmann T; Buczko M; Avenier G; Dutartre D; Dambrine G; Danneville F; Chantre A

Solid-State Electronics, Vol.53, No.8, 873-876, 2009

DOI10.1016/j.sse.2009.04.025 Export Citation

A selective epitaxy collector module for high-speed Si/SiGe:C HBTs

Geynet B, Chevalier P, Brossard F, Vandelle B, Schwartzmann T, Buczko M, Avenier G, Dutartre D, Dambrine G, Danneville F, Chantre A

This paper presents the results of investigations on high-speed self-aligned Si/SiGe:C HBTs featuring a selective epitaxial growth of the collector. We detail the dc and ac characteristics of the devices and demonstrate the improvement of the control of doping profiles at the base/collector junction. State-of-the-art f(T) value of 350 GHz has been achieved, the f(T) BVCEO product being equal to 525 GHz. V. (C) 2009 Elsevier Ltd. All rights reserved.

Keywords:Heterojunction Bipolar Transistor (HBT);Silicon-germanium;Cut-off frequency;Selective epitaxial growth;Implantation;Collector