A 10.5 Gb/s modified shunt-feedback transimpedance amplifier in a commercial 0.35 mu m SiGe BiCMOS technology is presented. A capacitive emitter degeneration technique was used to improve the bandwidth performance of the transimpedance amplifier. It achieved a transimpedance gain of 56 dB Omega, a -3 dB bandwidth of 6.2 GHz with a 0.4 pF input parasitic capacitance value, and a noise current spectral density of 9.46 pA/root Hz. The total circuit dissipates 29 mW under a 3.3 V supply, and the chip size is only 0.25 x 0.165 mm(2). (C) 2009 Elsevier Ltd. All rights reserved.