A closed form inversion charge-based drain current model for a short channel symmetrically driven, lightly doped symmetric double-gate MOSFET (SDGFET) is presented. The model has physical origins, but has some fitting parameters included in order to yield a better match with TCAD device simulations. Velocity saturation and channel length modulation effects are self-consistently included in the model. The incorporation of DIBL effects in the model is based on a solution of the two-dimensional Laplace equation that had been reported earlier and that is believed to be especially suited when the physical gate-oxide thickness is not negligible compared to the silicon body thickness. Addition of support for body doping and low-field mobility degradation is also presented. A very good match is shown in I-d-V-g, I-d-V-d and g(DS)-V-d curves and a reasonable match is shown in g(m)-V-g curves, when compared with 2D device simulations. The match in various characteristics is shown for devices as short as 20 nm. (C) 2009 Elsevier Ltd. All rights reserved.