InxGa1-xAs III-V compound semiconductor metal-oxide-semiconductor field-effect transistors have become a popular topic recently due to the higher drift velocity, and lower effective mass of the InxGa1-xAs materials. The impact of In content on the accumulation and inversion behaviors of the Al2O3/InxGa1-xAs capacitors is investigated in this study. For the various InxGa1-xAs materials studied, the Al2O3/InAs MOS system showed the strongest inversion phenomena due to the shorter response time of minority carrier of InAs compared to other InxGa1-xAs materials. Also, very low gate leakage current in the 10(-8) A/cm(2) range was observed for these capacitors. These results demonstrate that Al2O3/InAs MOS system with strong inversion phenomena and low leakage gate current is potential candidate for future high-performance low power logic MOSFET applications. (C) 2009 Elsevier Ltd. All rights reserved.