Our previously proposed concept of pragmatic FinFET design is overviewed, with new insights given, prior to presenting results of an assessment of nanoscale FinFETs on SOI versus bulk silicon (Si). The assessment is supported by 3-D numerical Simulations of FinFETs for a comparison of the electrical properties of the SOI and bulk-Si FinFETs, and it includes a discussion of serious processing issues for the latter The Sol FinFET is thereby suggested to be viable, whereas the bulk-St FinFET (as Currently defined) is not (C) 2009 Elsevier Ltd All rights reserved